Novel Low Loss LIGBT With Assisted Depletion N-Region and P-Buried Layer

A novel SiC MESFET with recessed P-Buffer layer

We report, for the first time, a silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) which has a recessed p-buffer layer into the channel region near the source and a recessed channel into the p-buffer layer region near the drain under the gate. The length and thickness of the channel recess into the p-buffer layer are larger than the pbuffer recess into the channel...

Vertical Bipolar Charge Plasma Transistor with Buried Metal Layer

A self-aligned vertical Bipolar Charge Plasma Transistor (V-BCPT) with a buried metal layer between undoped silicon and buried oxide of the silicon-on-insulator substrate, is reported in this paper. Using two-dimensional device simulation, the electrical performance of the proposed device is evaluated in detail. Our simulation results demonstrate that the V-BCPT not only has very high current g...

Ozone Layer Depletion

Tunneling Assisted Photo-Conductivity For Novel High Efficiency p-i-n MQW Solar Cells

We propose a first principles method of calculating the photo-component of tunneling conductivity of a specific superlattice (SL) photovoltaic structure: an InP/InGaAs P-I(SL)-N solar cell. The method we follow is based on the generalized Greenwood-Kubo formulation and on the causal form of the Green’s function. The vertical conductivity (along the growth direction of the device), under illumin...

Interfacial Layer Effect on Novel p-Ni1-xO:Li/n-Si Heterojunction Solar Cells

This study fabricates p-type Ni1−xO:Li/n-Si heterojunction solar cells (P/n HJSCs) by using radio frequency (RF) magnetron sputtering and investigates the effect of substrate temperature on photovoltaic cell properties. Grazing incidence x-ray diffraction, four point probe, and ultraviolet-visible-near infrared discover the optoelectrical properties of p-Ni1-xO thin films. The results show that...